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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32719


    Title: Low Schottky barrier to etched p-GaN using regrown AlInGaN and InGaN contact layer
    Authors: Hsueh,KP;Hsin,YM;Sheu,JK
    Contributors: 電機工程研究所
    Keywords: HETEROJUNCTION BIPOLAR-TRANSISTORS;PLASMA;FABRICATION;DIODES;DAMAGE
    Date: 2006
    Issue Date: 2010-07-07 09:56:12 (UTC+8)
    Publisher: 中央大學
    Abstract: The p-type AlInGaN and InGaN contact layers were regrown on the etched p-GaN to study the Ni/Au contact current-voltage (I-V) characteristics. The thickness of the contact layer was 100 nm and regrown by metalorganic chemical vapor deposition. By using th
    Relation: JOURNAL OF APPLIED PHYSICS
    Appears in Collections:[電機工程研究所] 期刊論文

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