Si-diffused GaN for enhancernent-mode GaN MOSFET on Si applications

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32727

Title:	Si-diffused GaN for enhancernent-mode GaN MOSFET on Si applications
Authors:	Jang,S;Ren,F;Pearton,SJ;Gila,BP;Hlad,M;Abernathy,CR;Yang,H;Pan,CJ;Chyi,JI;Bove,P;Lahreche,H;Thuret,J
Contributors:	電機工程研究所
Keywords:	FIELD-EFFECT-TRANSISTORS;INSULATOR-SEMICONDUCTOR STRUCTURES;CHEMICAL-VAPOR-DEPOSITION;N-TYPE GAN;INVERSION BEHAVIOR;ELECTRICAL CHARACTERIZATION;GATE OXIDE;DIODES;PERFORMANCE;INTERFACE
Date:	2006
Issue Date:	2010-07-07 09:56:27 (UTC+8)
Publisher:	中央大學
Abstract:	Si diffusion into GaN was studied as a function of encapsulant type (SiO2 or SiNx) and diffusion temperature. Using a SiO2 encapsulant, the Si diffusion exhibited an activation energy of 0.57 eV with a prefactor of 2.07 X 10(-4) cm(2) sec(-1) in the tempe
Relation:	JOURNAL OF ELECTRONIC MATERIALS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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