Surface Properties of the AlGaN/GaN Superlattice Grown at Different Temperatures by Metalorganic Chemical Vapor Deposition

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35230

Title:	Surface Properties of the AlGaN/GaN Superlattice Grown at Different Temperatures by Metalorganic Chemical Vapor Deposition
Authors:	Lai,Wei-Chih;Kuo,Cheng-Huang;Yen,Wei-Yu;Sheu,Jinng-Kong;Chang,Shoou-Jinng
Contributors:	光電科學與工程學系
Keywords:	LASER-DIODES;DEFECTS;LAYERS;GAN
Date:	2008
Issue Date:	2010-07-07 14:07:17 (UTC+8)
Publisher:	中央大學
Abstract:	AlGaN/GaN strained layer superlattice (SLS) structures were prepared by metalorganic vapor deposition (MOCVD) under various growth conditions. It was found that the surface morphology and V-shaped pits were determined by growth temperature. Two different
Relation:	JAPANESE JOURNAL OF APPLIED PHYSICS????
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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