The growth of single-phase In2Se3 by using metal organic chemical vapor deposition with A1N buffer layer

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35287

Title:	The growth of single-phase In2Se3 by using metal organic chemical vapor deposition with A1N buffer layer
Authors:	Chang,K. J.;Lahn,S. M.;Xie,Z. J.;Chang,J. Y.;Uen,W. Y.;Lu,T. U.;Lin,J. H.;Lin,T. Y.
Contributors:	光電科學與工程學系
Keywords:	MOLECULAR-BEAM EPITAXY;FILM SOLAR-CELLS;THIN-FILMS;INDIUM SELENIDE;OPTICAL-PROPERTIES;PHOTOLUMINESCENCE
Date:	2007
Issue Date:	2010-07-07 14:09:14 (UTC+8)
Publisher:	中央大學
Abstract:	Single-phase gamma-Tn(2)Se(3) thin films have been prepared on Si(111) substrate by metalorganic chemical vapor deposition technique using dual-source precursors: trimethylindium and hydrogen selenicle. The films have been characterized by X-ray diffracti
Relation:	JOURNAL OF CRYSTAL GROWTH
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	507	View/Open

社群 sharing