Rapid thermal annealed InGaN/GaN flip-chip LEDs

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35334

Title:	Rapid thermal annealed InGaN/GaN flip-chip LEDs
Authors:	Chen WS;Shei SC;Chang SJ;Su YK;Lai WC;Kuo CH;Lin YC;Chang CS;Ko TK;Hsu YP;Shen CF
Contributors:	光電科學與工程學系
Keywords:	LIGHT-EMITTING-DIODES;NITRIDE-BASED LEDS;P-TYPE GAN;OHMIC CONTACTS;LOW-RESISTANCE;BLUE;ITO;EFFICIENCY;GREEN
Date:	2006
Issue Date:	2010-07-07 14:10:52 (UTC+8)
Publisher:	中央大學
Abstract:	Nitride-based flip-chip (FC) light-emitting diodes (LEDs) emitting at 465 nm with Ni transparent ohmic contact layers and Ag reflective mirrors were fabricated. With an incident light wavelength of 465 nm, it was found that transmittance of normalized 300
Relation:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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