Nitride-based light-emitting diodes with p-AlInGaN surface layers

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35363

Title:	Nitride-based light-emitting diodes with p-AlInGaN surface layers
Authors:	Kuo,CH;Lin,CC;Chang,SJ;Hsu,YP;Tsai,JM;Lai,WC;Wang,PT
Contributors:	光電科學與工程學系
Keywords:	QUATERNARY EPILAYERS;O-2 AMBIENT;GAN;TEMPERATURE;INGAN;EFFICIENCY;LEDS
Date:	2005
Issue Date:	2010-07-07 14:11:59 (UTC+8)
Publisher:	中央大學
Abstract:	We have prepared bulk p-AlInGaN layers and light-emitting diodes (LEDs) with p-AlInGaN surface layers by metal-organic chemical vapor deposition. By properly control the TNIAI and TMIn flow rates, we could match the lattice constant of p-AlInGaN to that o
Relation:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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