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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35372

    Title: The thickness effect of p-AlGaN blocking layer in UV-A bandpass photodetectors
    Authors: Wang,CK;Ko,TK;Chang,CS;Chang,SJ;Su,YK;Wen,TC;Kuo,CH;Chiou,YZ
    Contributors: 光電科學與工程學系
    Date: 2005
    Issue Date: 2010-07-07 14:12:20 (UTC+8)
    Publisher: 中央大學
    Abstract: By means of 60-, 150-, and 300-nm-thick blocking p-Al0.1Ga0.9N layers, we have successfully achieved high performance on nitride-based p-i-n bandpass photodetectors. The peak responsivities were estimated to be 0.131, 0.129, and 0.13 A/W at 354, 357, and
    Appears in Collections:[光電科學與工程學系] 期刊論文

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