Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35391

Title:	Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs
Authors:	Hsu,YP;Chang,SJ;Su,YK;Sheu,JK;Lee,CT;Wen,TC;Wu,LW;Kuo,CH;Chang,CS;Shei,SC
Contributors:	光電科學與工程學系
Keywords:	LIGHT-EMITTING-DIODES;QUANTUM-WELL BLUE;GAN;CONTACTS;LAYERS;ALGAN
Date:	2004
Issue Date:	2010-07-07 14:13:04 (UTC+8)
Publisher:	中央大學
Abstract:	GaN epitaxial layers and InGaN/GaN multiquantum well blue light emitting diodes (LEDs) were prepared on both patterned sapphire substrates (PSS) and conventional sapphire substrates. From scanning electron microscopy micrographs of GaN epitaxial layers on
Relation:	JOURNAL OF CRYSTAL GROWTH
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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