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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35395


    Title: Nitride-based LEDs with modulation-doped Al0.12Ga0.88N-GaN superlattice structures
    Authors: Wen,TC;Chang,SJ;Lee,CT;Lai,WC;Sheu,JK
    Contributors: 光電科學與工程學系
    Keywords: LIGHT-EMITTING-DIODES;QUANTUM-WELL BLUE;INGAN-GAN;CONTACT;ITO
    Date: 2004
    Issue Date: 2010-07-07 14:13:13 (UTC+8)
    Publisher: 中央大學
    Abstract: Modulation doped Al0.12Ga0.88N-GaN superlattice structures were used to spread pulse current in nitride-based light emitting diodes (LEDs). Although the 20-mA electroluminescence (EL) intensity of the LEDs with modulation-doped AlGaN-GaN superlattice stru
    Relation: IEEE TRANSACTIONS ON ELECTRON DEVICES
    Appears in Collections:[光電科學與工程學系] 期刊論文

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