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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35426

    Title: Improvement of InGaN/GaN laser diodes by using a Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer
    Authors: Tu,RC;Tun,CJ;Shen,JK;Kuo,WH;Wang,TC;Tsai,CE;Hsu,JT;Chi,J;Chi,GC
    Contributors: 光電科學與工程學系
    Date: 2003
    Issue Date: 2010-07-07 14:14:25 (UTC+8)
    Publisher: 中央大學
    Abstract: InGaN/GaN multiple-quantum-well laser diode (LD) structures, including a Si-doped n(+)-In0.23Ga0.77N/GaN short-period superlattice (SPS) tunneling contact layer, were grown on c-face sapphire substrate by metalorganic vapor-phase epitaxy. The In0.23Ga0.77
    Appears in Collections:[光電科學與工程學系] 期刊論文

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