Metal-semiconductor-metal photodetectors with InAlGaP capping and buffer layers

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35440

Title:	Metal-semiconductor-metal photodetectors with InAlGaP capping and buffer layers
Authors:	Lee,CT;Lee,HY
Contributors:	光電科學與工程學系
Keywords:	MSM PHOTODETECTORS;RELIABILITY
Date:	2003
Issue Date:	2010-07-07 14:14:57 (UTC+8)
Publisher:	中央大學
Abstract:	To improve the Schottky contact performance and carrier confinement of GaAs metal-semiconductor-metal photodetectors (MSM-PDs), we employed the wide bandgap material, In-0.5(Al0.66Ga0.34)(0.5)P, for the capping and buffer layers. We directly evaluated the
Relation:	IEEE ELECTRON DEVICE LETTERS
Appears in Collections:	[光電科學與工程學系] 期刊論文

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