English  |  正體中文  |  简体中文  |  Items with full text/Total items : 70585/70585 (100%)
Visitors : 23090338      Online Users : 618
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35445


    Title: Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode
    Authors: Yu,QX;Xu,B;Wu,QH;Liao,Y;Wang,GZ;Fang,RC;Lee,HY;Lee,CT
    Contributors: 光電科學與工程學系
    Keywords: MOLECULAR-BEAM EPITAXY;N-TYPE GAN;LUMINESCENCE BAND;OHMIC CONTACTS;ZNO FILMS;OXIDE;EMISSION;DEVICES;PLASMA;MG
    Date: 2003
    Issue Date: 2010-07-07 14:15:10 (UTC+8)
    Publisher: 中央大學
    Abstract: We report on photoluminescence in a ZnO/GaN heterostructure, which showed a donor-acceptor pair emission band at 3.270 eV and the longitudinal optical phonon replicas at 12 K. In comparison with p-type GaN, the positions of the peaks are redshifted. This
    Relation: APPLIED PHYSICS LETTERS
    Appears in Collections:[光電科學與工程學系] 期刊論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML400View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明