Growth and performance study of aluminum-free InGaAs/GaAs/InGaAsP strained quantum-well pump lasers

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35500

Title:	Growth and performance study of aluminum-free InGaAs/GaAs/InGaAsP strained quantum-well pump lasers
Authors:	Shiao,HP;Lee,HY;Lin,YJ;Tu,YK;Lee,CT
Contributors:	光電科學與工程學系
Keywords:	MOLECULAR-BEAM-EPITAXY;DOPED FIBER AMPLIFIERS;980-NM
Date:	2001
Issue Date:	2010-07-07 14:34:15 (UTC+8)
Publisher:	中央大學
Abstract:	The growth of InGaP, InGaAs and InGaAsP epilayers lattice matched to GaAs using the low pressure organometallic vapor phase epitaxy (LP-OMVPE) system was investigated. For the application of erbium-doped fiber amplifiers (EDFAs), the emission wavelength a
Relation:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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