High-dielectric-constant Ta2O5/n-GaN metal-oxide-semiconductor structure

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35537

Title:	High-dielectric-constant Ta2O5/n-GaN metal-oxide-semiconductor structure
Authors:	Tu,LW;Kuo,WC;Lee,KH;Tsao,PH;Lai,CM;Chu,AK;Sheu,JK
Contributors:	光電科學與工程學系
Keywords:	DEAD LAYER MODEL;GAN EPIFILMS;PHOTOLUMINESCENCE;TEMPERATURE;DEPENDENCE;DENSITY;FILMS;STATE
Date:	2000
Issue Date:	2010-07-07 14:35:23 (UTC+8)
Publisher:	中央大學
Abstract:	High-dielectric-constant Ta2O5 has been grown on the n-GaN epifilm by rf magnetron sputtering. Photoluminescence measurement has been performed to compare the luminescence intensity with and without the dielectrics. Threefold increase in intensity is obta
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	560	View/Open

社群 sharing