Ohmic performance comparison for Ti/Ni/Au and Ti/Pt/Au on InAs/graded InGaAs/GaAs layers

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35550

Title:	Ohmic performance comparison for Ti/Ni/Au and Ti/Pt/Au on InAs/graded InGaAs/GaAs layers
Authors:	Lyu,YT;Jaw,KL;Lee,CT;Tsai,CD;Lin,YJ;Cherng,YT
Contributors:	光電科學與工程學系
Keywords:	MOLECULAR-BEAM EPITAXY;CONTACTS;RESISTANCE;INAS/INGAAS
Date:	2000
Issue Date:	2010-07-07 14:35:45 (UTC+8)
Publisher:	中央大學
Abstract:	Metallization systems of Ti/Ni/Au and Ti/Pt/Au were deposited onto InAs/graded InGaAs/GaAs epitaxial layers grown on GaAs substrate. Both of them exhibit good nonalloyed specific contact resistance of 1.0 x 10(-6) and 3.0 x 10(-6) Ohm cm(2) for Ti/Pt/Au a
Relation:	MATERIALS CHEMISTRY AND PHYSICS
Appears in Collections:	[Department of Optics and Photonics] journal & Dissertation

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