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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35553


    Title: Passivation mechanism analysis of sulfur-passivated InGaP surfaces using x-ray photoelectron spectroscopy
    Authors: Tsai,CD;Lee,CT
    Contributors: 光電科學與工程學系
    Keywords: MSM PHOTODETECTORS;SCHOTTKY CONTACT;TI/PT/AU METALS;GAAS;PERFORMANCES;RELIABILITY;INP
    Date: 2000
    Issue Date: 2010-07-07 14:35:55 (UTC+8)
    Publisher: 中央大學
    Abstract: We present the passivation mechanism and the chemistry of an (NH4)(2)S-x treated (100) InGaP surface using x-ray photoelectron spectroscopy. The native oxide on the as-etched InGaP surface could be further removed by a suitable (NH4)(2)S-x-treatment proce
    Relation: JOURNAL OF APPLIED PHYSICS
    Appears in Collections:[光電科學與工程學系] 期刊論文

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