Effects of stoichiometry on defect formation in ZnO epilayers grown by molecular-beam epitaxy: An optically detected magnetic resonance study

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题名:	Effects of stoichiometry on defect formation in ZnO epilayers grown by molecular-beam epitaxy: An optically detected magnetic resonance study
作者:	Wang,X. J.;Buyanova,I. A.;Chen,W. M.;Pan,C. J.;Tu,C. W.
贡献者:	光電科學研究中心
关键词:	NATIVE POINT-DEFECTS;ESR-SPECTRA;PHOTOLUMINESCENCE;FILMS
日期:	2008
上传时间:	2010-07-07 15:48:58 (UTC+8)
出版者:	中央大學
摘要:	Photoluminescence (PL) and optically detected magnetic resonance are employed to study effects of nonstoichiometry during the growth on defect formation in ZnO epilayers grown by molecular-beam epitaxy (MBE). Several defects are revealed via monitoring th
關聯:	JOURNAL OF APPLIED PHYSICS????
显示于类别:	[光電科學研究中心] 期刊論文

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