Residual strain in ZnO nanowires grown by catalyst-free chemical vapor deposition on GaN/sapphire (0001)

NCUIR > Research Center > Optical Sciences Center > journal & Dissertation > Item 987654321/35690

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35690

Title:	Residual strain in ZnO nanowires grown by catalyst-free chemical vapor deposition on GaN/sapphire (0001)
Authors:	Tsao,F. C.;Chen,J. Y.;Kuo,C. H.;Chi,G. C.;Pan,C. J.;Huang,P. J.;Tun,C. J.;Pong,B. J.;Hsueh,T. H.;Chang,C. Y.;Pearton,S. J.;Ren,F.
Contributors:	光電科學研究中心
Keywords:	LIGHT-EMITTING-DIODES;NANOBELTS;HETEROSTRUCTURE;DEVICES
Date:	2008
Issue Date:	2010-07-07 15:49:03 (UTC+8)
Publisher:	中央大學
Abstract:	ZnO nanowires were grown on 2-mu m-thick GaN templates by chemical vapor deposition without employing any metal catalysts. The GaN template was deposited by metal-organic chemical vapor deposition on a c-plane sapphire substrate. The diameters of the resu
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Optical Sciences Center] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	813	View/Open

社群 sharing