Nitride-based LEDs with an SPS Tunneling contact layer and an ITO transparent contact

NCUIR > Research Center > Optical Sciences Center > journal & Dissertation > Item 987654321/35716

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35716

Title:	Nitride-based LEDs with an SPS Tunneling contact layer and an ITO transparent contact
Authors:	Chang,SJ;Chang,CS;Su,YK;Chuang,RW;Lai,WC;Kuo,CH;Hsu,YP;Lin,YC;Shei,SC;Lo,HM;Ke,JC;Sheu,JK
Contributors:	光電科學研究中心
Keywords:	LIGHT-EMITTING-DIODES;QUANTUM-WELL BLUE;INGAN-GAN;OPERATION
Date:	2004
Issue Date:	2010-07-07 15:49:41 (UTC+8)
Publisher:	中央大學
Abstract:	The indium-tin-oxide [ITO(80 nm)] and Ni(5 nm)-Au(10 nm) films were separately deposited on glass substrates, p-GaN layers, n()-InGaN-GaN short-period-superlattice (SPS) structures, and nitride-based light-emitting diodes (LEDs). It was found that ITO on
Relation:	IEEE PHOTONICS TECHNOLOGY LETTERS
Appears in Collections:	[Optical Sciences Center] journal & Dissertation

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