Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths

NCUIR > Research Center > Optical Sciences Center > journal & Dissertation > Item 987654321/35719

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35719

Title:	Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths
Authors:	Li,YL;Gessmann,T;Schubert,EF;Sheu,JK
Contributors:	光電科學研究中心
Keywords:	WHITE-LIGHT;EFFICIENCY;COLOR;WELL
Date:	2003
Issue Date:	2010-07-07 15:49:46 (UTC+8)
Publisher:	中央大學
Abstract:	The carrier transport and recombination dynamics of monolithic InGaN/GaN light-emitting p-n junction structures with two active regions are investigated. Room-temperature and low-temperature photoluminescence and room-temperature electroluminescence measu
Relation:	JOURNAL OF APPLIED PHYSICS
Appears in Collections:	[Optical Sciences Center] journal & Dissertation

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