Deep level defect in Si-implanted GaN n(+)-p junction

NCUIR > Research Center > Optical Sciences Center > journal & Dissertation > Item 987654321/35720

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35720

Title:	Deep level defect in Si-implanted GaN n(+)-p junction
Authors:	Chen,XD;Huang,Y;Fung,S;Beling,CD;Ling,CC;Sheu,JK;Lee,ML;Chi,GC;Chang,SJ
Contributors:	光電科學研究中心
Keywords:	N-TYPE GAN;MG-DOPED GAN;TRANSIENT SPECTROSCOPY;SURFACE-STATES;DLTS SPECTRA;GAAS-MESFETS;EPITAXY;REGION
Date:	2003
Issue Date:	2010-07-07 15:49:47 (UTC+8)
Publisher:	中央大學
Abstract:	A deep level transient spectroscopy (DLTS) study has been performed on a GaN n(+)-p junction fabricated by implanting Si into a Mg-doped p-type GaN epilayer. A high concentration of a deep level defect has been revealed within the interfacial region of th
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Optical Sciences Center] journal & Dissertation

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