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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35723

    Title: High brightness InGaN green LEDs with an ITO on n(++)-SPS upper contact
    Authors: Chang,CS;Chang,SJ;Su,YK;Kuo,CH;Lai,WC;Lin,YC;Hsu,YP;Shei,SC;Tsai,JM;Lo,HM;Ke,JC;Shen,JK
    Contributors: 光電科學研究中心
    Date: 2003
    Issue Date: 2010-07-07 15:49:52 (UTC+8)
    Publisher: 中央大學
    Abstract: Indium tin oxide (ITO) (260 nm) and Ni (5 nm)/Au (10 nm) films were deposited onto glass substrates, p-GaN layers, n(+)-InGaN/GaN short-period-superlattice (SPS), n(++)-SPS and nitride-based green light-emitting diodes (LEDs). It was found that ITO could
    Appears in Collections:[光電科學研究中心] 期刊論文

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