InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35726

Title:	InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer
Authors:	Wu,LW;Chang,SJ;Su,YK;Tsai,TY;Wen,TC;Kuo,CH;Lai,WC;Sheu,JK;Tsai,JM;Chen,SC;Huang,BR
Contributors:	光電科學研究中心
Keywords:	LIGHT-EMITTING-DIODES;METAL ULTRAVIOLET PHOTODETECTORS;LOW-OPERATION VOLTAGE;QUANTUM-WELL BLUE;ALXGA1-XN/GAN SUPERLATTICES;ACCEPTOR ACTIVATION;GAN
Date:	2003
Issue Date:	2010-07-07 15:49:56 (UTC+8)
Publisher:	中央大學
Abstract:	Nitride-based light-emitting diodes (LEDs) with Si-doped n(+)-In0.23Ga0.77N/GaN short-period superlattice (SPS) tunneling contact top layer were fabricated. It was found that although the measured specific-contact resistance is around 1 x 10(-2) Omega-cm(
Relation:	JOURNAL OF ELECTRONIC MATERIALS
Appears in Collections:	[Optical Sciences Center] journal & Dissertation

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