Nitride-based green light-emitting diodes with high temperature GaN barrier layers

NCUIR > Research Center > Optical Sciences Center > journal & Dissertation > Item 987654321/35732

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35732

Title:	Nitride-based green light-emitting diodes with high temperature GaN barrier layers
Authors:	Wu,LW;Chang,SJ;Su,YK;Chuang,RW;Wen,TC;Kuo,CH;Lai,WC;Chang,CS;Tsai,JM;Sheu,JK
Contributors:	光電科學研究中心
Keywords:	QUANTUM-WELL BLUE;INGAN-GAN;GROWTH TEMPERATURE;SI
Date:	2003
Issue Date:	2010-07-07 15:50:13 (UTC+8)
Publisher:	中央大學
Abstract:	High-quality InGaN-GaN multiquantum well (MQW) light-emitting diode (LED) structures were prepared by temperature ramping method during metalorganic chemical vapor deposition (MOCVD) growth. It was found that we could reduce the 20-mA forward voltage and
Relation:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Appears in Collections:	[Optical Sciences Center] journal & Dissertation

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