English  |  正體中文  |  简体中文  |  Items with full text/Total items : 70585/70585 (100%)
Visitors : 23275591      Online Users : 554
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version

    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35736

    Title: Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers
    Authors: Kuo,CH;Chang,SJ;Su,YK;Wu,LW;Sheu,JK;Wen,TC;Lai,WC;Tsai,JM;Chen,SC
    Contributors: 光電科學研究中心
    Date: 2003
    Issue Date: 2010-07-07 15:50:17 (UTC+8)
    Publisher: 中央大學
    Abstract: The In0.05Ga0.95N/GaN, In0.05Ga0.95l0.1Ga0.9N, and In0.05Ga0.95L(0.18)Ga(0.82)N multiple-quantum well (MQW) light-emitting diodes (LEDs) were prepared by metal-organic chemical-vapor deposition. (MOCVD). It was found that the 20-mA electroluminescen
    Appears in Collections:[光電科學研究中心] 期刊論文

    Files in This Item:

    File Description SizeFormat

    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明