Properties of Cu/Au Schottky contacts on InGaP layer

NCUIR > Research Center > Optical Sciences Center > journal & Dissertation > Item 987654321/35742

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35742

Title:	Properties of Cu/Au Schottky contacts on InGaP layer
Authors:	Liu,DS;Lee,CT;Wang,CW
Contributors:	光電科學研究中心
Keywords:	MSM PHOTODETECTORS;SOLAR-CELLS;GAAS;DEGRADATION;RELIABILITY;MECHANISM;STABILITY;TRANSPORT;VOLTAGE;DIODES
Date:	2003
Issue Date:	2010-07-07 15:50:23 (UTC+8)
Publisher:	中央大學
Abstract:	We use Auger electron spectroscopy (AES) measurements to obtain elemental distributions for Cu/Au Schottky contacts to an InGaP layer in as-deposited and thermally annealed samples. The AES depth profile shows an obvious Cu layer with no apparent interdif
Relation:	JOURNAL OF APPLIED PHYSICS
Appears in Collections:	[Optical Sciences Center] journal & Dissertation

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