English  |  正體中文  |  简体中文  |  Items with full text/Total items : 70585/70585 (100%)
Visitors : 23279483      Online Users : 543
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version

    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35744

    Title: Si and Zn co-doped InGaN-GaN white light-emitting diodes
    Authors: Chang,SJ;Wu,LW;Su,YK;Kuo,CH;Lai,WC;Hsu,YP;Sheu,JK;Chen,SF;Tsai,JM
    Contributors: 光電科學研究中心
    Date: 2003
    Issue Date: 2010-07-07 15:50:26 (UTC+8)
    Publisher: 中央大學
    Abstract: InGaN-GaN double heterostructure (DH) and multi-quantum-well (MQW) light-emitting diodes (LEDs) with Si and Zn co-doped active well layers were prepared by metalorganic chemical vapor deposition (MOCVD). It was found that we could observe a broad long-wav
    Appears in Collections:[光電科學研究中心] 期刊論文

    Files in This Item:

    File Description SizeFormat

    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明