Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al0.15Ga0.85N/GaN superlattice

NCUIR > Research Center > Optical Sciences Center > journal & Dissertation > Item 987654321/35788

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/35788

Title:	Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al0.15Ga0.85N/GaN superlattice
Authors:	Sheu,JK;Chi,GC;Jou,MJ
Contributors:	光電科學研究中心
Keywords:	INDIUM TIN OXIDE;P-TYPE GAN;CONTACTS
Date:	2001
Issue Date:	2010-07-07 15:51:11 (UTC+8)
Publisher:	中央大學
Abstract:	Low-resistivity Mg-doped Al0.15Ga0.85N/GaN strained-layer superlattices were grown. In these superlattices, the maximum hole concentration is 3 x 10(18)/cm(3) at room temperature. Hall-effect measurements indicate high conductivity of this structure in wh
Relation:	IEEE ELECTRON DEVICE LETTERS
Appears in Collections:	[Optical Sciences Center] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	749	View/Open

社群 sharing