Control of nucleation site density of GaN nanowires

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38265

Title:	Control of nucleation site density of GaN nanowires
Authors:	Chang,Chih-Yang;Pearton,S. J.;Huang,Ping-Jung;Chi,Gou-Chung;Wang,Hung-Ta;Chen,Jau-Juin;Ren,F.;Chen,Kuei-Hsien;Chen,Li-Chyong
Contributors:	物理研究所
Keywords:	GALLIUM NITRIDE NANOWIRES;GROWTH-MECHANISM;OHMIC CONTACTS;NANORODS
Date:	2007
Issue Date:	2010-07-08 13:21:54 (UTC+8)
Publisher:	中央大學
Abstract:	The control of nucleation site size and density for An catalyst-driven growth of GaN nanowires is reported. By using initial An film thicknesses of 15-50 angstrom we have shown that annealing between 300 and 900 degrees C creates An cluster size in the ra
Relation:	APPLIED SURFACE SCIENCE
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

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