Optical studies of InN epilayers on Si substrates with different buffer layers

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38330

Title:	Optical studies of InN epilayers on Si substrates with different buffer layers
Authors:	Yang,M. D.;Shen,J. L.;Chen,M. C.;Chiang,C. C.;Lan,S. M.;Yang,T. N.;Lo,M. H.;Kuo,H. C.;Lu,T. C.;Huang,P. J.;Hung,S. C.;Chi,G. C.;Chou,W. C.
Contributors:	物理研究所
Keywords:	MOLECULAR-BEAM EPITAXY;INDIUM NITRIDE;BAND-GAP;HETEROEPITAXIAL GROWTH;FILMS;PHOTOLUMINESCENCE;TEMPERATURE
Date:	2007
Issue Date:	2010-07-08 13:23:56 (UTC+8)
Publisher:	中央大學
Abstract:	We have investigated the photoluminescence (PL) and time-resolved PL from the InN epilayers grown on Si substrates with different buffer layers. The narrowest value of the full width at half maximum of the PL peak is 52 meV with the AllGaN/GaN triple b
Relation:	JOURNAL OF APPLIED PHYSICS
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

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