The effects of AlN buffer on the properties of InN epitaxial films grown on Si(111) by plasma-assisted molecular-beam epitaxy

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38437

Title:	The effects of AlN buffer on the properties of InN epitaxial films grown on Si(111) by plasma-assisted molecular-beam epitaxy
Authors:	WU C.-L.;SHEN C.-H.;CHEN H.-Y.;TSAI S.-J.;LIN H.-W.;LEE H.-M.;GWO S.;CHUANG T.-F.;CHANG H.-S.;HSU T. M.
Contributors:	物理研究所
Keywords:	FUNDAMENTAL-BAND GAP;MULTIPLE-QUANTUM WELLS;HEXAGONAL INN;WURTZITE INN;V-DEFECTS;TEMPERATURE;INGAN/GAN
Date:	2006
Issue Date:	2010-07-08 13:27:17 (UTC+8)
Publisher:	中央大學
Abstract:	By using a new double-buffer-layer (AlN/Si3N4) technique. wurtzite-type InN(0 0 0 1) epitaxial films have been grown on Si(1 1 1) substrates by nitrogen-plasma-assisted molecular beam epitaxy. In this technique, a single crystal Si3N4 layer (commensuratel
Relation:	JOURNAL OF CRYSTAL GROWTH
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

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