Rectifying characteristics of WSi0.8-GaN Schottky barrier diodes with a GaN cap layer grown at low temperature

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38516

Title:	Rectifying characteristics of WSi0.8-GaN Schottky barrier diodes with a GaN cap layer grown at low temperature
Authors:	Sheu,JK;Lee,ML;Lai,WC;Tseng,HC;Chi,GC
Contributors:	物理研究所
Keywords:	N-TYPE GAN;THERMAL-STABILITY;CONTACTS;PHOTODETECTORS;HEIGHT;GAAS;WSIX
Date:	2005
Issue Date:	2010-07-08 13:29:50 (UTC+8)
Publisher:	中央大學
Abstract:	Undoped GaN/low-temperature (LT) GaN/WSi0.8 and undoped GaN/WSi0.8 Schottky barrier contacts were prepared. Introducing the LT GaN on top of the conventional structures markedly reduced the leakage current and increased the barrier height. The measured ba
Relation:	JOURNAL OF APPLIED PHYSICS
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

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