Effect of GaN cap layer grown at a low temperature on electrical characteristics of Al0.25Ga0.75N/GaN heterojunction field-effect transistors

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38565

Title:	Effect of GaN cap layer grown at a low temperature on electrical characteristics of Al0.25Ga0.75N/GaN heterojunction field-effect transistors
Authors:	Kao,CJ;Sheu,JK;Lai,WC;Lee,ML;Chen,MC;Chi,GC
Contributors:	物理研究所
Keywords:	ALGAN/GAN HETEROSTRUCTURES;MOBILITY TRANSISTORS;PASSIVATION
Date:	2004
Issue Date:	2010-07-08 13:31:22 (UTC+8)
Publisher:	中央大學
Abstract:	This study examined the effect of GaN grown by metalorganic vapor phase epitaxy at low temperature (LT-GaN) on the surface of Al0.25Ga0.75N/GaN heterostructures. Depositing a high-resistivity LT-GaN surface layer on the Al0.25Ga0.75N/GaN heterostructures
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

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