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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38647

    Title: Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
    Authors: Lee,ML;Sheu,JK;Lai,WC;Su,YK;Chang,SJ;Kao,CJ;Tun,CJ;Chen,MG;Chang,WH;Chi,GC;Tsai,JM
    Contributors: 物理研究所
    Date: 2003
    Issue Date: 2010-07-08 13:33:58 (UTC+8)
    Publisher: 中央大學
    Abstract: By using organometallic vapor phase epitaxy we have prepared i-GaN/low temperature (LT) GaN/Ni/Au (sample A) and i-GaN/Ni/Au (sample B) Schottky barrier ultraviolet (UV) photodiodes (PDs). It was found that we could significantly reduce leakage current an
    Appears in Collections:[物理研究所] 期刊論文

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