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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38678

    Title: Nitride-based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer
    Authors: Sheu,JK;Kao,CJ;Lee,ML;Lai,WC;Yeh,LS;Chi,GC;Chang,SJ;Su,YK;Tsa,JM
    Contributors: 物理研究所
    Date: 2003
    Issue Date: 2010-07-08 13:35:02 (UTC+8)
    Publisher: 中央大學
    Abstract: The GaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with a low-temperature (LT)-GaN layer have been demonstrated. It was found that we could achieve a two orders of magnitude smaller, photodetector-dark current by introducing a LT-GaN
    Appears in Collections:[物理研究所] 期刊論文

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