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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/38864

    Title: Luminescence of an InGaN/GaN multiple quantum well light-emitting diode
    Authors: Sheu,JK;Chi,GC;Su,YK;Liu,CC;Chang,CM;Hung,WC;Jou,MJ
    Contributors: 物理研究所
    Keywords: LASER;GAN
    Date: 2000
    Issue Date: 2010-07-08 13:41:13 (UTC+8)
    Publisher: 中央大學
    Abstract: In GaN/GaN multiple quantum wells (MQW) and blue MQW light-emitting diodes (LEDs) were grown by metalorganic vapor phase epitaxy (MOVPE). Band-gap narrowing of the PL spectra for the InGaN/GaN MQW LEDs can be observed at room temperature. In addition, the
    Appears in Collections:[物理研究所] 期刊論文

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