中大機構典藏-NCU Institutional Repository-提供博碩士論文、考古題、期刊論文、研究計畫等下載:Item 987654321/39003
English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 70588/70588 (100%)
造訪人次 : 23101177      線上人數 : 630
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋


    請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/39003


    題名: Electrical and optical changes in the near surface of reactively ion etched n-GaN
    作者: Chen,JY;Pan,CJ;Chi,GC
    貢獻者: 物理研究所
    關鍵詞: PHOTOLUMINESCENCE;HYDROGEN;MIXTURE;DAMAGE;INP
    日期: 1999
    上傳時間: 2010-07-08 14:01:53 (UTC+8)
    出版者: 中央大學
    摘要: Photoluminescence (PL) and ohmic contact resistance measurements were used to characterize the n-GaN surface treated with reactive ion etching (RIE). The n-GaN him was grown on a sapphire substrate by a metal organic chemical vapor deposition process. Subsequently, the GaN film was etched with BCl3 or Ar gas prior to the PL measurement and contact metal Ti/Al deposition. In PL spectra, we observed the peak shift of the impurity-related emission (yellow luminescence (YL)) for both BCl3 and Ar etched n-GaN films. The amount of this wavelength shift increases with the RIE rf power increase and depends on the species of the etching gases. The shift of the YL peak decreased after thermal annealing at 500 degrees C for 30 s. The YL peak shift may be attributed to the RIE induced surface point defects. In the ohmic contact resistance measurements, the transmission line model technique was used. The contact resistance of the RIE etched surface is around 5.4 x 10(-4) Omega cm(2). However, a lower contact resistance of 5.7 x 10(-6) Omega cm(2) was obtained for a native surface of n-GaN film. No obvious distinction between the roughness of etched and native GaN surfaces was observed by the atomic force microscope measurements. In an Xray grazing diffraction measurement, the crystalline lattice orientation and the coherent length of native n-GaN layer were better than the etched n-GaN according to the results of the rocking curve and Theta-2 Theta scan. (C) 1999 Elsevier Science Ltd. All rights reserved.
    關聯: SOLID-STATE ELECTRONICS
    顯示於類別:[物理研究所] 期刊論文

    文件中的檔案:

    檔案 描述 大小格式瀏覽次數
    index.html0KbHTML341檢視/開啟


    在NCUIR中所有的資料項目都受到原著作權保護.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回饋  - 隱私權政策聲明