Excitation density and temperature dependent photoluminescence of InGaAs self-assembled quantum dots

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/39006

Title:	Excitation density and temperature dependent photoluminescence of InGaAs self-assembled quantum dots
Authors:	Chang,WH;Hsu,TM;Tsai,KF;Nee,TE;Chyi,JI;Yeh,NT
Contributors:	物理研究所
Keywords:	TIME-RESOLVED PHOTOLUMINESCENCE;PHONON BOTTLENECK;ELECTRON RELAXATION;CARRIER RELAXATION;EXCITED-STATES;RECOMBINATION;LUMINESCENCE;SCATTERING;GAAS
Date:	1999
Issue Date:	2010-07-08 14:01:59 (UTC+8)
Publisher:	中央大學
Abstract:	In this paper, we shall report on the excitation density and temperature dependent photoluminescence produced by discrete energy levels from InGaAs self assembled quantum dots. While increasing the photoexcitation density, five peaks originating from discrete energy levels of quantum dot and wetting layer are observed. By deconvoluting these spectra using multiple Gaussian fit, the intensity of each state is saturated following its degeneracy. We describe the lateral confinement of quantum dots using a parabolic potential model. The saturated values are in good agreement with the degeneracy of this potential type. From the temperature dependent photoluminescence, we observed the thermally activated quenching of each state. Our results suggest that the wetting layer acts as a barrier to the carrier thermallization processes offering a two dimensional path for inter-dot coupling.
Relation:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

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