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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/39015

    Title: Inductively coupled plasma etching of GaN using Cl-2/Ar and Cl-2/N-2 gases
    Authors: Sheu,JK;Su,YK;Chi,GC;Jou,MJ;Liu,CC;Chang,CM;Hung,WC
    Contributors: 物理研究所
    Keywords: III-V NITRIDES
    Date: 1999
    Issue Date: 2010-07-08 14:02:15 (UTC+8)
    Publisher: 中央大學
    Abstract: This work investigates inductively coupled plasma (ICP) etching processes of GaN. Etching behaviors are also characterized by varying the ICP power, Cl-2/Ar or Cl-2/N-2 mixing ratio, radio-frequency (rf) power, and chamber pressure. Experimental results indicate that the etching profiles are highly anisotropic over the range of etching conditions. Maximum etching rates of 8200 Angstrom/min in Cl-2/Ar plasma and 8330 Angstrom/min in Cl-2/N-2 plasma are obtained as well. In addition, pressure, ICP power, Cl-2/Ar(N-2) flow ratio and rf power significantly influence etching rate and surface morphology. In particular, dc bias heavily influences the etching rates, suggesting that the ion-bombardment effect is an important factor of these etching processes. (C) 1999 American Institute of Physics. [S0021-8979(99)03903-1].
    Appears in Collections:[物理研究所] 期刊論文

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