Electrical derivative characteristics of ion-implanted AlGaInP/GaInP multi-quantum well lasers

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题名:	Electrical derivative characteristics of ion-implanted AlGaInP/GaInP multi-quantum well lasers
作者:	Sheu,JK;Su,YK;Chang,SJ;Chi,GC;Lin,KB;Liu,CC;Chiu,CC
贡献者:	物理研究所
关键词:	HETEROSTRUCTURE
日期:	1998
上传时间:	2010-07-08 14:04:02 (UTC+8)
出版者:	中央大學
摘要:	In this study. H+ ion implantation was used to form high resistive regions in an AlGaInP/GaInP multi-quantum well (MQW) gain guided laser diode. The electrical derivative was used to characterize the properties of the fabricated laser diodes. The equivalent circuits were proposed to model the diodes for various structures. It was found that diodes fabricated with H+ ion implantation, have lower threshold current density and better carrier confinement characteristics. (C) 1998 Published by Elsevier Science Ltd. All rights reserved.
關聯:	SOLID-STATE ELECTRONICS
显示于类别:	[物理研究所] 期刊論文

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