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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/39131

    Title: Growth and characterizations of GaN on SiC substrates with buffer layers
    Authors: Lin,CF;Cheng,HC;Chi,GC;Feng,MS;Guo,JD;Hong,JMH;Chen,CY
    Contributors: 物理研究所
    Date: 1997
    Issue Date: 2010-07-08 14:05:54 (UTC+8)
    Publisher: 中央大學
    Abstract: High quality GaN epitaxial layers were grown on 6H-SiC substrates by using low-pressure metalorganic chemical vapor deposition method, Samples employing a three-period GaN/Al0.08Ga0.92N (100 Angstrom/100 Angstrom) as a buffer layer produce a good quality GaN epitaxial layer, with mobility and carrier concentration of 612 cm(2)/V.s and 1.3x10(17) cm(-3) (at 300 K), respectively, The enhanced electron mobility in the Al0.08Ga0.92N/GaN heterostructures is also observed, By using the van der Pauw method of Hall measurement, the sheet carrier density and mobility at 4.2 K for the Al0.08Ga0.92N/GaN heterostructure are 5.8x10(12) cm(-2) and 5300 cm(2)/V.s, respectively. Strong SdH (Shubnikov-de Haas) oscillations were observed to confirm the two-dimensional electron gas (2DEG) phenomenon at the AlGaN/GaN top heterointerface. In addition, an extra SdH oscillation also resulted from the high-duality 2DEG channel of the GaN/AlGaN bottom heterointerface. (C) 1997 American Institute of Physics.
    Appears in Collections:[物理研究所] 期刊論文

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