MODELING TEMPERATURE-DEPENDENT PHOTOREFLECTANCE SPECTRA OF SINGLE ALGAAS/GAAS MODULATION-DOPED HETEROJUNCTIONS

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/39237

Title:	MODELING TEMPERATURE-DEPENDENT PHOTOREFLECTANCE SPECTRA OF SINGLE ALGAAS/GAAS MODULATION-DOPED HETEROJUNCTIONS
Authors:	LU,NH;HSU,TM
Contributors:	物理研究所
Keywords:	FRANZ-KELDYSH OSCILLATIONS;ELECTRIC-FIELD;ENERGY-LEVELS;GAAS;HETEROSTRUCTURE;SEMICONDUCTORS;SI;SPECTROSCOPY;TRANSITIONS;GAAS/GAALAS
Date:	1995
Issue Date:	2010-07-08 14:09:16 (UTC+8)
Publisher:	中央大學
Abstract:	We attempt to deal with the physical processes involved in the temperature-dependent photoreflectance of single AlGaAs/GaAs modulation-doped heterojunction structures. Building on the assumption that photomodulation mechanism is due chiefly to modification of the band bending in the buffer layer, we apply the Franz-Keldysh theory to simulate the temperature-dependent photoreflectance spectra of single AlGaAs/GaAs modulation-doped heterojunction structures. In view of the nonuniformity of the electric field within the buffer layer, the field profile of which is calculated through the application of self-consistent variational approach, the WKB method is used to approximate the effective change in the dielectric function. A comparison between the experimental and the simulated results attests the validity of our assumption. The effects of temperature on the electric-field strengths, estimated from the extrema of the Franz-Keldysh oscillations, can be accounted for by considering the temperature dependence of the Fermi level. (C) 1995 American Institute of Physics.
Relation:	JOURNAL OF APPLIED PHYSICS
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

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