CRYOGENIC AND HIGH-TEMPERATURE OPERATION OF AL0.52IN0.48P/IN0.2GA0.8AS HIGH-ELECTRON-MOBILITY TRANSISTORS

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題名:	CRYOGENIC AND HIGH-TEMPERATURE OPERATION OF AL0.52IN0.48P/IN0.2GA0.8AS HIGH-ELECTRON-MOBILITY TRANSISTORS
作者:	KUO,JM;CHAN,YJ
貢獻者:	物理研究所
日期:	1993
上傳時間:	2010-07-08 14:11:48 (UTC+8)
出版者:	中央大學
摘要:	The cryogenic and high temperature characterization of Al0.52In0.48P/In0.2Ga0.8As high electron mobility transistors (HEMTs) with 1 mum-long gates, grown by gas-source molecular-beam epitaxy is being reported. Bias-stress measurements at 77 K in the dark showed only 18 mV threshold voltage shift, confirming that trapping effects are negligible in this material system. Successful operation of these HEMTs at temperatures up to 300-degrees-C has been achieved. These results suggest that AlInP/InGaAs HEMTs have potential for cryogenic and high temperature applications.
關聯:	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
顯示於類別:	[物理研究所] 期刊論文

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