FRANZ-KELDYSH OSCILLATIONS OF DELTA-DOPED GAAS

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/39352

Title:	FRANZ-KELDYSH OSCILLATIONS OF DELTA-DOPED GAAS
Authors:	HSU,TM;TIEN,YC;LU,NH;TSAI,SP;LIU,DG;LEE,CP
Contributors:	物理研究所
Keywords:	SURFACE FERMI LEVEL;DEPLETION REGION;ELECTRIC-FIELD;PHOTOREFLECTANCE;ELECTROREFLECTANCE;SI
Date:	1992
Issue Date:	2010-07-08 14:13:07 (UTC+8)
Publisher:	中央大學
Abstract:	Si-delta-doped GaAs (N2D almost-equal-to 10(11) cm-2) samples grown by molecular-beam epitaxy are investigated by using photoreflectance spectroscopy. The oscillations observed above the GaAs fundamental band gap are attributed to the Franz-Keldysh effect in the region between the delta-doped layer and the crystal surface. This ascription is confirmed by detailed studies through varying the cap thickness (250-2500 angstrom), temperature (10-450 K), and laser pump power (0.05-7 mW/cm2). The surface potential deduced from the Franz-Keldysh oscillations is found to be temperature and laser pump power dependent, which is explained by taking the surface photovoltaic effect into account. The surface Fermi level has been measured by this method and is found to have the value 0.73+/-0.02 V.
Relation:	JOURNAL OF APPLIED PHYSICS
Appears in Collections:	[Graduate Institute of Physics] journal & Dissertation

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