此計劃『平面結構氮化鎵雙極性電晶體與高原結構異質接面氮化鎵電晶體的研究』乃延續前期的AlGaN/GaN HBT 的成果(製程分析有論文發表於APL 與JAP，元件有完成大元件直流特性，並投稿於APL)，分成二個部份：(1) Mesa-type AlGaN/GaN HBT 與 (2) Planar GaN BJT。在高原結構異質接面氮化鎵電晶體(Mesa-type AlGaN/GaN HBT)部份，將繼續目前的優秀研究成果進一步改善電晶體的特性。目前已完成Mesa-type AlGaN/GaN HBT 製程，電流增益大於100(有些區域更高達10000)，但因基極的缺陷與大的漏電流，導致無法得到正常的common-emitter IV 曲線。將利用鈍化層來設法改善漏電流，以及研究 AlGaN/GaN/AlGaN DHBT 結構。預期完成的AlGaN/GaN HBT 元件有正常 common-emitter IV 曲線且預期截止頻率> 1 GHz。而AlGaN/GaN/AlGaN DHBT 元件電流增益 > 10。在平面結構氮化鎵雙極性電晶體(Planar GaN BJT)部份，將利用基本的n/p-GaN 磊晶層加上離子佈植來將上層的p-GaN 反轉形成區域性的n-emitter。也就形成了GaN npn 結構。此時表面的n 與p(emitter 與base)可以直接上金屬電極，而最下層的n-GaN 則必須再利用高能量的多次Si 離子佈植來形成連接。但其電極仍然位於表面，所以稱為平面結構GaN BJT。預期完成的Planar GaN BJT 元件電流增益 > 10 且預期截止頻率> 1 GHz。 This proposal entitled 「Planar GaN BJT and Mesa-type AlGaN/GaN HBT」 is based on the current NSC project on AlGaN/GaN HBTs to further develop new GaN BJT and improve the current fabricated AlGaN/GaN HBTs. The major tasks focus on two different devices including planar GaN BJT and mesa-type AlGaN/GaN HBT. For the mesa-type AlGaN/GaN HBT, to further improve the current results is important. Because we have fabricated AlGaN/GaN HBTs with high current gain of over 100. But due to the large leakage current, the non-normal common-emitter IV curves are not obtained. The surface passivation will be studied to possibly improve the leakage current. In addition, AlGaN/GaN DHBT will be studied. The expectedly improved AlGaN/GaN HBT performs normal common-emitter IV characteristics. And AlGaN/GaN DHBT exhibits current gain larger than 10. To achieve a planar GaN BJT, the fundamental n/p-GaN epi-layer is used for surface ion-implantation to form the n-emitter region. The n-emitter and p-base regions can be connected by metallization easily. However, the bottom p-GaN for collector needs a further deep ion-implantation to form sinker to connect to the collector. But its metal connect is still on the surface to be a planar structure. The expected current gain of planar GaN BJT is larger than 10. 研究期間：9508 ~ 9607
