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    题名: 二氧化鈦基表面增強拉曼基板之製作與檢測;Fabrication and Characterizations of TiO2 Based Surface-Enhanced Raman Scattering Substrates
    作者: 蔡睿翰;Jui-han Tsai
    贡献者: 材料科學與工程研究所
    关键词: 二氧化鈦;表面增強拉曼;TiO2;SERS
    日期: 2011-08-29
    上传时间: 2012-01-05 12:25:07 (UTC+8)
    摘要: 本研究利用不同管徑之二氧化鈦奈米管陣列製作二氧化鈦基表面增強拉曼基板,研究內容主要可分為三大部分,第一部分為二氧化鈦奈米管陣列基板的製作,藉由控制陽極氧化之電壓與溶液組成,製作出管徑15nm?150nm之奈米管陣列。 第二部分為沉積金製作表面增強拉曼基板;在此比較了沉積金在不同管徑的基板上,及改變金的量所得到的SERS強度,並以RTA退火進行表面改質,比較退火溫度對SERS的影響。結果得知在50nm管徑的基板上沉積金,可得到最強的SERS強度;而沉積金的量對於SERS強度並無太大影響; RTA退火後,將金由薄膜改變為金奈米粒子散佈在基板上,增強了其表面電漿場,而強化了基板SERS強度為未退火的2倍以上。且在600℃時有最強的SERS強度。且我們所製作之基板可量測到濃度最低達10-8M。 第三部分改變沉積金屬為銀,比較沉積銀在不同管徑的基板上,所得到的SERS強度,再以RTA退火進行表面改質,比較退火溫度對SERS的影響。結果得知在75nm管徑的基板,可獲得最強的SERS強度,退火後同樣增強了SERS的強度至2倍以上。比較不同管徑之二氧化鈦奈米管基板在不同溫度下退火的結果,可得知適當的退火溫度可使原先SERS強度不強的管徑之基板,在退火後得到與75nm管徑之基板差不多的強度,而證明了適當的表面改質,可使原先SERS效應不強的基板,得到與SERS效應較強之基板同樣的強度。 In this study, we fabricated TiO2 based surface-enhanced Raman scattering substrates with TiO2 nanotube arrays. This thesis includes three parts; the first part was related to the fabrication of TiO2 nanotube array substrates. We have successfully fabricated TiO2 nanotube with diameter from 15 nm to 150 nm by controlling anodic voltage and the electrolyte composition. The second part was related to the fabrication of Au-decorated TiO2-nanotube substrates. We compared the SERS activity of substrates with different tube diameters. We also used RTA to further improve the SERS activity. From the experimental results, we found that the TiO2 nanotube substrate with 50 nm tube diameter have the highest SERS performance. The highest SERS activity, which can effectively detect the concentration of R6G as low as to 10-8M, appeared with the annealing temperature of 600℃. The third part was related to the fabrication of Ag-decorated TiO2-nanotube substrates. We compared the SERS activity of substrates with different tube diameters. We also employed RTA to enhance the SERS activity. From the experimental results, we found that the TiO2-nanotube substrate with the tube diameter of 75 nm have the highest SERS activity. The highest SERS activity, which can detect the concentration of R6G as low as to 10-8M, appeared at annealing temperature of 400℃. In addition, with the tube diameter of 26 nm and annealing temperature of 500 ℃, the SERS substrate can detect the concentration of R6G as low as to 10-9M.
    显示于类别:[材料科學與工程研究所 ] 博碩士論文

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