以螢光訊號量測單晶矽太陽能電池物理參數之空間分布; Spatial distribution measurement of physical parameters for crystalline silicon solar cells using photoluminescence signal

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題名:	以螢光訊號量測單晶矽太陽能電池物理參數之空間分布;Spatial distribution measurement of physical parameters for crystalline silicon solar cells using photoluminescence signal
作者:	鍾穎昌;Ying-Chang Chung
貢獻者:	照明與顯示科技研究所
關鍵詞:	特徵串聯電阻;額外載子生命週期;螢光量測;擴散長度;photoluminescence measurement;excess carrier lifetime;specific series resistance;diffusion length
日期:	2011-08-24
上傳時間:	2012-01-05 14:42:45 (UTC+8)
摘要:	本文使用光激發螢光影像技術，量測載子生命週期、擴散長度和特徵串聯電阻。短路狀態時，單晶矽太陽能電池會因不同光強造成不同的螢光、光電壓與光電流，此時便可利用短路螢光模型計算出載子生命週期影像、光電壓影像與光電流影像，而擴散長度與載子生命週期有關，由此便可得到擴散長度影像，最後載子生命週期也可推算出j-V 曲線，再藉由j-V 曲線取其斜率便可計算出特徵串聯電阻影像。而載子生命週期影像帄均值約為2.5610^-5 sec，誤差百分比帄均則約為0.69 %；特徵串聯電阻影像帄均值約為1.42 Ωcm^2，誤差百分比帄均則約為0.35 %。為了驗證此量測法的正確性，分別地使用入射光強度為0.82 W/cm^2與0.67 W/cm^2得到各別的載子生命週期與特徵串聯電阻影像，將載子生命週期影像相除的結果帄均值為1.05，其標準差為0.14；特徵串聯電阻影像相除的結果帄均值為1.02 ，其標準差為0.07，所以由標準差可知空間中的每個像素是與入射光無關的，因此證明了這量測方法的正確性。接著再藉由入射光強度為0.82 W/cm^2 的載子生命週期影像計算擴散長度影像，而擴散長度影像又分為n 型半導體的電子與電洞擴散長度影像、p 型半導體的電子與電洞擴散長度影像，其帄均值各別為66 μm、92 μm、289 μm、165 μm。 The article uses photoluminescence imaging technology to measure excess carrier lifetime, diffusion length and specific series resistance. Crystalline silicon solar cells has different photoluminescence, photovoltage and photocurrent because of different illumination result in the short-circuit state, we can use PL module in the short-circuit to calculate excess carrier lifetime imaging, photovoltage imaging and photocurrent imaging. The relationship between excess carrier lifetime and diffusion length, so we can obtain diffusion length imaging by excess carrier lifetime imaging. Finally, excess carrier lifetime can calculate the j-v curve, so we can obtain specific series resistance by the slope of j-v curve. Excess carrier lifetime imaging average is about 2.5610^-5 sec , percentage error average is about 0.69 %, specific series resistance imaging average is about1.42 Ωcm^2 , percentage error average is about0.35 %. In order to verify the correctness of this measurement method, we choose two illumination intensity at 0.82 W/cm^2 and 0.67 W/cm^2 , and then we obtain two excess carrier lifetime imaging and two specific series resistance imaging. We divide a excess carrier lifetime imaging by another excess carrier lifetime imaging, and specific series resistance imaging is the same. Average value of the results are about 1.05±0.14 and 1.02±0.07, we can know that each pixel is independent of illumination intensity by standard deviations, so we verify the correctness of this measurement method. On the illumination intensity is 0.82 W/cm^2 ,we use excess carrier lifetime imaging to calculate diffusion length imaging, the diffusion length imaging is divided into electron and hole iii diffusion length imaging of the n-type semiconductor, electron and hole diffusion length imaging of the p-type semiconductor, average value of the results are 66 μm,92 μm,289 μm,165 μm.
顯示於類別:	[照明與顯示科技研究所 ] 博碩士論文

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