注入增強型與電場終止型之絕緣閘雙極性電晶體佈局設計與分析; IEGT and FS-IGBT layout design and analysis

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Title:	注入增強型與電場終止型之絕緣閘雙極性電晶體佈局設計與分析;IEGT and FS-IGBT layout design and analysis
Authors:	王晟康;Cheng-kang Wang
Contributors:	電機工程研究所
Keywords:	高功率元件;絕緣閘雙極性電晶體;IGBT
Date:	2011-07-26
Issue Date:	2012-01-05 14:56:08 (UTC+8)
Abstract:	絕緣閘雙極性電晶體整合金氧半電晶體的絕緣閘結構與雙極性電晶體的導通特性，具有易於驅動的低導通電阻、高輸出電流密度，可以承受高電壓及快速度的切換工作模式，克服兩種功率元件在應用上的缺點，達到中高功率、頻率上的有效應用。本論文利用元件設計模擬軟體，來模擬先進絕緣閘雙極性電晶體元件的結構和分析內部半導體物理特性，藉由此模擬步驟能更精確的設計元件的製程參數，達成元件設計目標。目前絕緣閘雙極性電晶體主要朝向改善元件靜態特性，崩潰電壓、導通壓降，以及動態特性關閉時因切換所形成之功率損耗，因此在順向導通條件下，需較低的導通壓降及快速的切換速度，以減少功率效能的損失。本論文藉由參考東芝公司與英飛凌公司設計溝渠式結構之絕緣閘雙極性電晶體，做一完整的相關研究與討論，探討佈局設計條件之趨勢與相關性分析。 Insulated Gate Bipolar Transistor (IGBT), which integrates the structures of Power Bipolar Transistor and Power MOSFET, and has better performance in many applications. It has low conduction resistance and high output current density. In this thesis, we use device characteristics simulation tools to simulate the device structure and analyze the semiconductor physics characteristics. Due to the simulations, we can have a precise result to improve the process parameter. The IGBT is mainly toward improve the power performance, reduce the loss of power performance, having the lower conduction resistance and high breakdown voltage. We consult the device from TOSHIBA and Infineon company, and design a series of simulations.
Appears in Collections:	[Graduate Institute of Electrical Engineering] Electronic Thesis & Dissertation

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