Fabrication of High-Power InGaN-Based Light-Emitting Diode Chips on Pyramidally Patterned Sapphire Substrate

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Title:	Fabrication of High-Power InGaN-Based Light-Emitting Diode Chips on Pyramidally Patterned Sapphire Substrate
Authors:	Chen,YJ;Kuo,CH;Tun,CJ;Hsu,SC;Cheng,YJ;Liu,CY
Contributors:	化學工程與材料工程學系
Date:	2010
Issue Date:	2012-03-27 16:24:53 (UTC+8)
Publisher:	國立中央大學
Abstract:	A pyramidal pattern was produced on a c-plane sapphire substrate by a mask-free etching process. Photoluminescence (PL) results show that a GaN-based light-emitting diode (LED) epilayer grown on the pyramidally patterned sapphire substrate has higher epitaxial quality than that grown on a standard flat c-plane sapphire substrate. When the input current is 350 mA, the average light output power of LED chips on the pyramidally patterned sapphire substrate is 37% larger than that of LED chips on a standard c-plane sapphire substrate. (C) 2010 The Japan Society of Applied Physics
Relation:	JAPANESE JOURNAL OF APPLIED PHYSICS
Appears in Collections:	[Department of Chemical and Materials Engineering] journal & Dissertation

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