Light Output Enhancement of Near UV-LED by Using Ti-Doped ITO Transparent Conducting Layer

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题名:	Light Output Enhancement of Near UV-LED by Using Ti-Doped ITO Transparent Conducting Layer
作者:	Lin,YH;Liu,YS;Liu,CY
贡献者:	化學工程與材料工程學系
关键词:	EMITTING-DIODES;TEMPERATURE;GAN;JUNCTION;CONTACT
日期:	2010
上传时间:	2012-03-27 16:25:25 (UTC+8)
出版者:	國立中央大學
摘要:	With Ti doping, the transmittance of indium-tin-oxide (ITO) thin film is greatly enhanced in near the ultraviolet (UV) range. After annealing at 500 degrees C in vacuum, the transmittance of Ti-doped ITO (Ti : ITO) thin film at 380 nm is larger than that of pure ITO thin film by 22%. And, the resistivity of annealed Ti : ITO thin film is equivalent with that of ITO thin film (4.248 x 10(-4) Omega . cm). Using Ti : ITO as TCL, the light output power of UV light-emitting diode (LED) is enhanced by 52.1%, compared to UV-LED (380 nm) with an ITO transparent conducting layer.
關聯:	IEEE PHOTONICS TECHNOLOGY LETTERS
显示于类别:	[化學工程與材料工程學系 ] 期刊論文

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